Germanium Quantum Dots Embedded in N‐Doping Graphene Matrix with Sponge‐Like Architecture for Enhanced Performance in Lithium‐Ion Batteries

Germanium quantum dots embedded in a nitrogen‐doped graphene matrix with a sponge‐like architecture (Ge/GN sponge) are prepared through a simple and scalable synthetic method, involving freeze drying to obtain the Ge(OH)₄/graphene oxide (GO) precursor and subsequent heat reduction treatment. Upon application as an anode for the lithium‐ion battery (LIB), the Ge/GN sponge exhibits a high discharge capacity compared with previously reported N‐doped graphene. The electrode with the as‐synthesized Ge/GN sponge can deliver a capacity of 1258 mAh g^?1 even after 50 charge/discharge cycles. This improved electrochemical performance can be attributed to the pore memory effect and highly conductive N‐doping GN matrix from the unique sponge‐like structure.