Distinctive features of time-resolved photoluminescence of porous silicon coated with a layer of diamondlike carbon |
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| Authors: | Yu. P. Piryatinskii V. A. Semenovich N. I. Klyui A. G. Rozhin |
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| Affiliation: | (1) Institute of Physics, National Academy of Sciences of Ukraine, 252028 Kiev, Ukraine;(2) Institute of Ultrahard Materials, National Academy of Sciences of Ukraine, 254074 Kiev, Ukraine;(3) Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 252028 Kiev, Ukraine |
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| Abstract: | Time-resolved photoluminescence from porous silicon coated with a diamondlike carbon film is investigated. The intensity of the photoluminescence from the carbon film is obserd to increase after deposition, and there is an accompanying change in the intensity and a shortwavelength shift of the photoluminescence band of porous silicon that depends on the porosity of its original layers. These changes are explained by the formation of carbon nanoclusters on the surface of the silicon filaments. Zh. Tekh. Fiz. 68, 83–87 (April 1998) |
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