Electronic and optical properties of α‐MoO3/TiO2 heterostructures: A DFT study

The coupling of metal oxide semiconductors has become an effective method to improve the separation of photon‐generated carriers and light absorption efficiency. In this study, we explored electronic and optical properties of monolayer and bilayer α‐MoO₃ on TiO₂ (001) surface. It is observed that α‐MoO₃/TiO₂ heterostructures can form a stable Mo‐O‐Ti bonding mode at the interface. Electrons transfer from TiO₂ (001) surface to the α‐MoO₃, leading to the enhancement of the valence band and the optical absorption spectrum in visible light region. In addition, this proper charge transfer generates a built‐in electric field between the interface regions of bilayer α‐MoO₃/TiO₂ heterostructure and forms a favorable type‐II band alignment between the two α‐MoO₃ layers. The α‐MoO₃/TiO₂ heterostructure can prevent the recombination of the electron‐hole pairs; thus, excite electrons can easily move from TiO₂ to the inner layer, and then to the outer layer of α‐MoO₃. These results demonstrate that the bilayer α‐MoO₃/TiO₂ heterostructure, especially the outer layer α‐MoO₃, has efficient photoelectric performance.