AES and SIMS profiling of buried silicide layers formed by 6 MeV high dose nickel implantation into silicon |
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| Authors: | A. Schö nborn, J. K. N. Lindner, E. H. te Kaat, H. Hubert, M. Grasserbauer G. Friedbacher |
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| Affiliation: | (1) Institut für Physik, Universität Dortmund, Postfach 500500, D-4600 Dortmund 50, Federal Republic of Germany;(2) Institut für Spektrochemie und angewandte Spektroskopie, D-4600 Dortmund 1, Federal Republic of Germany;(3) Institut für Analytische Chemie, Technische Universität Wien, A-1060 Wien, Austria |
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| Abstract: | Summary The composition of deep-buried conductive layers formed by 6 MeV high dose Ni implantation into silicon at 450 K has been studied using AES and SIMS. For a dose of 1.3 × 1018 Ni/cm2, AES analysis yields a Ni to Si ratio close to NiSi2 stoichiometry at profile maximum, as expected from high dose Monte Carlo simulations. In this region the shape of the Si LVV Auger line indicates the presence of NiSi2. TEM/XTEM investigations reveal a continuous NiSi2 layer, showing a high density of extended defects.
AES- und SIMS-Profilanalyse vergrabener Silicidschichten, die durch 6-MeV-Hochdosis-Nickel-Implantation in Silicium erzeugt wurden |
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