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Investigation of O7+ swift heavy ion irradiation on molybdenum doped indium oxide thin films |
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| Authors: | V Gokulakrishnan S Parthiban E Elangovan K Jeganathan D Kanjilal K Asokan R Martins E Fortunato K Ramamurthi |
| Institution: | 1. School of Electronic & Information Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China;2. Jiangsu Collaborative Innovation Center on Atmospheric Environment and Equipment, Nanjing 210044, Jiangsu Province, China\n;3. School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510641, China |
| Abstract: | Molybdenum (0.5 at%) doped indium oxide thin films deposited by spray pyrolysis technique were irradiated by 100 MeV O7+ ions with different fluences of 5×1011, 1×1012 and 1×1013 ions/cm2. Intensity of (222) peak of the pristine film was decreased with increase in the ion fluence. Films irradiated with the maximum ion fluence of 1×1013 ions/cm2 showed a fraction of amorphous nature. The surface microstructures on the surface of the film showed that increase in ion fluence decreases the grain size. Mobility of the pristine molybdenum doped indium oxide films was decreased from ～122 to 48 cm2/V s with increasing ion fluence. Among the irradiated films the film irradiated with the ion fluence of 5×1011 ions/cm2 showed relatively low resistivity of 6.7×10?4 Ω cm with the mobility of 75 cm2/V s. The average transmittance of the as-deposited IMO film is decreased from 89% to 81% due to irradiation with the fluence of 5×1011 ions/cm2. |
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