Origin of the 330 nm absorption band and effect of doping Yb in LiYF4 crystals |
| |
Authors: | Jigang Yin Yin Hang Lianhan Zhang Jing Xiong Pengchao Hu |
| |
Affiliation: | a Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, PR China b Graduate School of Chinese Academy of Sciences, Beijing 100039, PR China |
| |
Abstract: | The electronic structures of LiYF4 (YLF) crystals containing F color center (YLF-F) and Yb doped YLF crystals (Yb3+:YLF, Yb2+:YLF) are systematically studied within the framework of the density functional theory. The calculated results indicate that the 330 nm absorption band originates from the F center in YLF crystals. Thus the doping of Yb3+ can weaken the 330 nm absorption band by competing with F vacancies in capturing free electrons arising after γ-irradiation and change to Yb2. By analyzing the lattice relaxation and the electronic structure of YLF containing Yb2+, we can reasonably believe that once Yb2+ is formed in YLF crystal, its compensating hole will turn out to be shared by two F− nearest to Yb2+ forming a diatomic fluoride molecular ion () perturbed by Yb2+, or to say VF color center. According to the molecular-orbital linear combination of atomic orbital (MO-LCAOs) theory, compared to the alkali halides, e.g. LiF, the in VF center in LiYF4 peaks at about 340 nm, which is in agreement with the experimental results. |
| |
Keywords: | LiYF4 crystal ABINIT F and VF color centers Doping Absorption bands |
本文献已被 ScienceDirect 等数据库收录! |
|