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Admittance Characteristics of nBn Structures Based on Hgcdte Grown by Molecular Beam Epitaxy |
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| Authors: | Voitsekhovskii A. V. Nesmelov S. N. Dzyadukh S. M. Dvoretsky S. A. Mikhailov N. N. Sidorov G. Yu. |
| Affiliation: | 1.National Research Tomsk State University, Tomsk, Russia ;2.Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia ; |
| Abstract: | Russian Physics Journal - For the first time, the admittance of nBn structures based on HgCdTe grown by molecular beam epitaxy was experimentally investigated in a wide range of frequencies and... |
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