Epitaxial Growth and Thermoelectric Measurement of Bi2Te3/Sb Superlattice Nanowires |
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| Authors: | Liang Li Si-chao Xu Guang-hai Li |
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| Institution: | 1.Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China2.Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China;School of Chemistry and Materials Science, University of Science and Technology of China, Hefei 230026, China |
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| Abstract: | Superlattice nanowires are expected to show further enhanced thermoelectric performance compared with conventional nanowires or superlattice thin films. We report the epitaxial growth of high density Bi2Te3/Sb superlattice nanowire arrays with a very small bilayer thickness by pulse electrodeposition. Transmission electron microscopy, selected area electron diffraction and high resolution transmission electron microscopy were used to characterize the superlattice nanowires, and Harman technique was employed to measure the figure of merit (ZT) of the superlattice nanowire array in high vacuum condition. The superlattice nanowire arrays exhibit a ZT of 0.15 at 330 K, and a temperature difference of about 6.6 K can be realized across the nanowire arrays. |
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| Keywords: | Bi2Te3 Superlattice nanowires Electrodeposition Thermoelectric Harman technique |
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