Deposition and characterisation of a porous Sn(IV) semiconductor nanofilm on boron-doped diamond |
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| Authors: | Michael Hyde Andrew J Saterlay Shelley J Wilkins John S Foord Richard G Compton Frank Marken |
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| Institution: | (1) Physical & Theoretical Chemistry Laboratory, Oxford University, South Parks Road, Oxford OX1 3QZ, UK,;(2) Department of Chemistry, Loughborough University, Loughborough LE11 3TU, UK, |
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| Abstract: | Nanofilm deposits of a porous Sn(IV) oxide are formed by anodic electrodeposition on a polished boron-doped diamond electrode
immersed in an aqueous Sn2+ solution. Mechanically and electrochemically stable deposits of 10–15 nm thickness are formed irrespective of the Sn2+ concentration and mass-transport enhancement by power ultrasound. Atomic force microscopy images indicate the presence of
a smooth and noncrystalline film, which is stable under ambient conditions. n-type semiconducting characteristics are observed
for the aqueous solution redox couples Fe(CN)6
3–/4– and Ru(NH3)6
3+/2+. However, preliminary results from voltammetric experiments indicate that the small and neutral organic molecule N,N,N′,N′-tetramethylphenylenediamine is able to diffuse through the porous film to undergo oxidation directly at the surface of the
boron-doped diamond electrode.
Electronic Publication |
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| Keywords: | Semiconductor Porous film Nanofilm Boron-doped diamond Voltammetry |
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