Formation of CNx thin films by reactive pulsed laser deposition assisted by electron cyclotron resonance microwave discharge |
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| Authors: | W. Shi J.D. Wu J. Sun H. Ling Z.F. Ying X.M. Ding Z.Y. Zhou F.M. Li |
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| Affiliation: | (1) State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams and Department of Optical Science and Engineering, Fudan University, Shanghai 200433, P.R. China, CN;(2) State Key Laboratory of Applied Surface Physics and Department of Physics, Fudan University, Shanghai 200433, P.R. China, CN;(3) Institute of Modern Physics, Fudan University, Shanghai 200433, P.R. China, CN |
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| Abstract: | Amorphous carbon nitride thin films were synthesized by pulsed laser deposition combined with electron cyclotron resonance (ECR) microwave discharge in nitrogen gas. The ECR discharge supplies active nitrogen species in the deposition environment and to the growing film surface, enhancing the film growth in complex processes accompanied by chemical reaction. The synthesized films were characterized by Rutherford backscattering spectroscopy (RBS), X-ray photoelectron spectroscopy (XPS), Fourier-transform infrared spectroscopy (FTIR), and Raman spectroscopy. The films were determined to consist purely of carbon and nitrogen with a nitrogen concentration of 42%, and have a thickness of 550 nm over which carbon and nitrogen are well distributed. Structural characterizations based on XPS, FTIR and Raman analysis showed that these films appear to contain several bonding configurations between carbon and nitrogen with a small amount of C≡N bonds compared with other bonding states. Received: 31 August 2000 / Accepted: 12 December 2000 / Published online: 23 May 2001 |
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| Keywords: | PACS: 6855 8115.F 5275.Rx |
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