Degradation mechanisms of current gain in NPN transistors |
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Authors: | Li Xing-Ji Geng Hong-Bin Lan Mu-Jie Yang De-Zhuang He Shi-Yu and Liu Chao-Ming |
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Institution: | Space Materials and Environment Engineering Laboratory, Harbin Institute of Technology, Harbin 150001, China; School of Astronautics, Harbin Institute of Technology, Harbin 150001, China |
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Abstract: | An investigation of ionization and displacement damage in
silicon NPN bipolar junction transistors (BJTs) is presented. The
transistors were irradiated separately with 90-keV electrons, 3-MeV
protons and 40-MeV Br ions. Key parameters were measured {\em
in-situ} and the change in current gain of the NPN BJTS was obtained
at a fixed collector current ($I_{\rm c}=1$~mA). To characterise the
radiation damage of NPN BJTs, the ionizing dose $D_{\i}$ and
displacement dose $D_{\d}$ as functions of chip depth in the NPN
BJTs were calculated using the SRIM and Geant4 code for protons,
electrons and Br ions, respectively. Based on the discussion of the
radiation damage equation for current gain, it is clear that the
current gain degradation of the NPN BJTs is sensitive to both
ionization and displacement damage. The degradation mechanism of
the current gain is related to the ratio of $D_{\rm d}$/($D_{\rm
d}+D_{\rm i})$ in the sensitive region given by charged particles.
The irradiation particles leading to lower $D_{\rm d}$/($D_{\rm
d}+D_{\rm i})$ within the same chip depth at a given total dose
would mainly produce ionization damage to the NPN BJTs. On the other
hand, the charged particles causing larger $D_{\rm d}$/($D_{\rm
d}+D_{\rm i})$ at a given total dose would tend to generate
displacement damage to the NPN BJTs. The Messenger--Spratt equation
could be used to describe the experimental data for the latter
case. |
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Keywords: | radiation effects ionization damage displacement damage transistors |
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