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| GaAs FET功率放大器温度补偿的设计 | |
| 引用本文： | 霍年鑫. GaAs FET功率放大器温度补偿的设计[J]. 低温与超导, 2007, 35(4): 352-354 |
| 作者姓名： | 霍年鑫 |
| 作者单位： | 中国电子科技集团公司第十六研究所,合肥,230043 |
| 摘 要： | 介绍了GaAs FET功率放大器温度补偿的基本原理,分析了GaAs FET功率放大器的增益随温度变化的原因,并给出了解决方法。此方法还可移植到其他类似需要温度补偿的放大器中。 |
| 关 键 词： | 温度补偿 热敏电阻 衰减器 功率放大器 |
Design of the temperature compensation in the GaAs FET power amplifier |
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| Huo Nianxin. Design of the temperature compensation in the GaAs FET power amplifier[J]. Cryogenics and Superconductivity, 2007, 35(4): 352-354 | |
| Authors: | Huo Nianxin |
| Abstract: | The gain of the GaAs FET power amplifier varies with the ambient temperature.The principle of the temperature compensation of the power amplifier is described in the paper.The reasons are analyzed and the resolved ways are put forward,too.The resolved ways can be also used into all other amplifiers that need temperature compensation. |
| Keywords: | Temperature compensation Thermal resistor Attenuator Power amplifier |
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