真空条件下不同波长固体激光烧蚀单晶硅的实验研究

通过倍频Nd：YAG固体激光的基波得到波长分别为532、355和266 nm的激光，研究了单晶硅（Si）对不同波长固体激光的吸收规律和3种不同波长激光在真空条件下烧蚀单晶Si的烧蚀特征。结果表明，单晶Si对波长为100~370 nm的紫外激光具有很好的吸收效果；在其他条件相同时，532 nm波长激光烧蚀单晶Si所需最低单脉冲能量（Ep=30 μJ）是355和266 nm波长激光烧蚀单晶Si所需最低单脉冲能量（Ep=15 μJ）的2倍；532、355和266 nm的激光烧蚀单晶Si的烧蚀阈值随着波长的变短而变小。

Different wavelength solid-state laser ablation of silicon wafer in vacuum

Lasers with wavelengths of 532 nm,355 nm and 266 nm are obtained using harmonic generation of a Nd∶ YAG solid-state laser by nonlinear optical crystal. The relationship between the absorption of single crystal silicon and the laser wavelength and ablation characteristics of single crystal silicon by 3 different wavelength lasers under vacuum condition are studied. The results show that single crystal silicon has a good absorption of ultraviolet laser in the wavelength range of 100- 370 nm,and under the same conditions,the minimum single pulse energy for 532 nm laser ablation of silicon is 30 μJ and the minimum single pulse energy for 355 nm or 266 nm laser ablation of silicon is 15 μJ. The ablation threshold values of 532 nm,355 nm and 266 nm laser ablation of silicon are different,which become smaller with the decrease of wavelength.