A dual-blue light-emitting diode based on strain-compensated InGaN-AlGaN/GaN quantum wells |
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| Authors: | Yan Qi-Rong Yan Qi-Ang Shi Pei-Pei Niu Qiao-Li Li Shu-Ti and Zhang Yong |
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| Affiliation: | Laboratory of Nanophotonic Functional Materials and Devices,Institute of Optoelectronic Materials and Technology,South China Normal University,Guangzhou 510631,China |
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| Abstract: | A strain-compensated InGaN quantum well(QW) active region employing a tensile AlGaN barrier is analyzed.Its spectral stability and efficiency droop for a dual-blue light-emitting diode(LED) are improved compared with those of the conventional InGaN/GaN QW dual-blue LEDs based on a stacking structure of two In0.18Ga0.82N/GaN QWs and two In0.12Ga0.88N/GaN QWs on the same sapphire substrate.It is found that the optimal performance is achieved when the Al composition of the strain-compensated AlGaN layer is 0.12 in blue QW and 0.21 in blue-violet QW.The improvement performance can be attributed to the strain-compensated InGaN-AlGaN/GaN QW,which can provide a better carrier confinement and effectively reduce leakage current. |
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| Keywords: | InGaN-AlGaN/GaN quantum well InGaN/GaN quantum well spectral stability dual-blue lightemitting diode |
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