Roles of V/III ratio and mixture degree in GaN growth: CFD and MD simulation study |
| |
Authors: | Zhou An ab Xiu Xiang-Qian b Zhang Rong b Xie Zi-Li b Hua Xue-Mei b Liu Bin b Han Ping b Gu Shu-Lin b Shi Yi b and Zheng You- |
| |
Institution: | a School of Physics, Nanjing University, Nanjing 210093, China;b Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China |
| |
Abstract: | To understand the mechanism of Gallium nitride (GaN) film growth is of great importance for their potential applications. In this paper, we investigate the growth behavior of the GaN film by combining computational fluid dynamics (CFD) and molecular dynamics (MD) simulations. Both of the two simulations show that V/III mixture degree can have important impacts on the deposition behavior, and it is found that the more uniform the mixture is, the better the growth is. Besides, by using MD simulations, we illustrate the whole process of the GaN growth. Furthermore, we also find that the V/III ratio can affect the final roughness of the GaN film. When the V/III ratio is high, the surface of final GaN film is smooth. The present study provides the insights into GaN growth from the macroscopic and microscopic views, which may provide some suggestions on better experimental GaN preparation. |
| |
Keywords: | GaN growth computational fluid dynamics molecular dynamics |
本文献已被 CNKI 维普 等数据库收录! |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
| 点击此处可从《中国物理 B》下载免费的PDF全文 |
|