Improvement of characteristics of an InGaN light-emitting diode by using a staggered AlGaN electron-blocking layer |
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| Authors: | Chen Jun ab Fan Guang-Han b Zhang Yun-Yan |
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| Affiliation: | b) a) Experimental Teaching Department, Guangdong University of Technology, Guangzhou 510006, China b) Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631,China |
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| Abstract: | The optical and physical properties of an InGaN light-emitting diode (LED) with a specific design of a staggered AlGaN electron-blocking layer (EBL) are investigated numerically in detail. The electrostatic field distribution, energy band, carrier concentration, electroluminescence (EL) intensity, internal quantum efficiency (IQE), and the output power are simulated. The results reveal that this specific design has a remarkable improvement in optical performance compared with the design of a conventional LED. The lower electron leakage current, higher hole injection efficiency, and consequently mitigated efficiency droop are achieved. The significant decrease of electrostatic field at the interface between the last barrier and the EBL of the LED could be one of the main reasons for these improvements. |
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| Keywords: | electron-blocking layer light-emitting diodes efficiency droop |
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