CdSe/HgSe/CdSe量子点量子阱(QDQW)晶粒的光学性质和电子结构

以CdSe纳米晶体为核,用胶体化学的方法,通过化学替代反应,获得了不同阱层或不同垒层的CdSeHgSeCdSe量子点量子阱(QDQW)晶体.紫外可见光吸收谱研究表明,通过调节QDQW中间HgSe阱层的厚度从0.9nm至0,可以调节QDQW颗粒的带隙从1.8变化至2.1eV,实现QDQW纳米晶体的剪裁.光致荧光(PL)谱研究显示,QDQW形成后,CdSeHgSe纳米颗粒表面态得到钝化,显现出发光强度加强的带边荧光峰.利用有效质量近似模型,对QDQW晶粒内部电子的1s—1s态进行了估算,估算结果总体趋势与实验数据相符关键词：量子点量子阱晶体 能带剪裁 加强的带边荧光峰

Electronic structure and optical properties of CdSe/HgSe/CdSe quantum dot quantum well

Core|shell structured CdSe/HgSe/CdSe quantum dot quantum well (QDQW) nanocrystals were synthesized and well controlled by a colloidal chemical method. The results of optical absorption studies show that with appropriate HgSe well thickness (from 0.9 nm to 0), it is possible to tailor the 1s|1s transition energy of QDQW nanocrystals from 1.8 to 2.1 eV. The enhancement and blue shift of photoluminescence peak was observed, which was attributed to the quantum confinement effect of carriers in HgSe well. The 1s|1s transition energies of QDQW nanocrystals have been estimated by the effective mass approximation method. The results are compared with the experimentally determined 1s|1s energies. It is shown that the general trend observed in the experiments is well reflected in the calculation.