The comparison of ZnO nanowire detectors working under two wavelengths of ultraviolet |
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| Authors: | Weihua Lin Xiaomei Zhang Zheng Zhang Yang Lei |
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| Affiliation: | a State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People’s Republic of Chinab Key Laboratory of New Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083, People’s Republic of China |
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| Abstract: | Schottky-barrier ultraviolet (UV) detectors based on ZnO-nanowires (NWs) were fabricated with Pt as electrodes in this investigation. The ZnO NWs synthesized by the hydrothermal method were characterized by field-emission scanning electron microscopy (FE-SEM), Raman and PL spectroscopy. Photoelectric properties under 254 and 365 nm UV light were investigated. It is found that the photo-response properties of the devices under 365 nm UV light are better than those under 254 nm UV light, which is further illustrated by light transmission theory, energy-band diagram and absorption spectra. The results demonstrate that ZnO NWs detectors with selectivity to near-UV (NUV) light are promising candidates in photoelectric devices. |
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| Keywords: | A. Nanostructures A. Zinc oxide C. Photoconductive detectors D. Photo-response properties |
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