Influence of magnetic quantization on the effective electron mass in Kane-type semiconductors |
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Authors: | K P Ghatak A Ghoshal B Mitra |
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Institution: | (1) Department of Electronics and Tele-Communication Engineering Faculty of Engineering and Technology, University of Jadavpur, 700032 Calcutta, India;(2) Present address: Office of the Controller of Examinations, University of Jadavpur, 700032 Calcutta, India |
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Abstract: | Summary We study the effective electron mass at the Fermi level in Kane-type semiconductors on the basis of fourth order in effective
mass theory and taking into account the interactions of the conduction electrons, heavy holes, light holes and split-off holes,
respectively. The results obtained are then compared to those derived on the basis of the well-known three-band Kane model.
It is found, takingn-Hg1−x
Cd
x
Te as an example, that the effective electron mass at the Fermi level in accordance with fourth-order model depends on the
Fermi energy, magnetic quantum number and the electron spin respectively due to the influence of band nonparabolicity only.
The dependence of effective mass on electron spin is due to spin-orbit splitting parameter of the valence band in three-band
Kane model and the Fermi energy due to band nonparabolicity in two-band Kane model. The same mass exhibits an oscillatory
magnetic-field dependence for all the band models as expected since the origin of oscillations in the effective mass in nonparabolic
compounds is the same as that of the Shubnikov-de Hass oscillations. In addition, the corresponding results for parabolic
energy bands have been obtained from the generalized expressions under certain limiting conditions. |
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Keywords: | Nonlocalized single-particle electronic states |
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