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不同方法DKDP晶体生长和损伤阈值
引用本文:孙绍涛,季来林,王正平,牟晓明,孙洵,许心光,史崇德.不同方法DKDP晶体生长和损伤阈值[J].强激光与粒子束,2010,22(2).
作者姓名:孙绍涛  季来林  王正平  牟晓明  孙洵  许心光  史崇德
作者单位:1. 山东大学 晶体材料国家重点实验室, 济南 250100;2. 中国工程物理研究院 上海激光等离子体研究所, 上海 201800;3. 海军航空工程学院 基础部, 山东 烟台 264001
基金项目:国家自然科学基金项目,国家自然科学基金委员会-中国工程物理研究院联合基金项目,国家高技术发展计划项目 
摘    要:生长方法是影响DKDP晶体生长和光损伤阈值的一个重要因素。分别采用传统降温法和点籽晶快速生长法,利用同种原料从氘化程度为85%的溶液生长了DKDP晶体,并选取部分Ⅱ类3倍频晶片进行3倍频光损伤阈值和透过性能测试。实验表明,不同生长方法对DKDP晶体的损伤阈值以及DKDP晶体的生长速度的影响效果正好相反,即由于生长溶液过饱和度的差别,点籽晶快速生长法晶体生长速度为传统方法的10倍,但晶体损伤阈值下降了50%,且紫外波段透过性能下降明显。

关 键 词:DKDP晶体  损伤阈值  晶体生长  惯性约束聚变
收稿时间:1900-01-01;

Growth and laser damage threshold of DKDP crystal grown by different methods
SunShaotao,JiLailin,WangZhengping,MuXiaoming,SunXun,XuXinguang,ShiChongde.Growth and laser damage threshold of DKDP crystal grown by different methods[J].High Power Laser and Particle Beams,2010,22(2).
Authors:SunShaotao  JiLailin  WangZhengping  MuXiaoming  SunXun  XuXinguang  ShiChongde
Institution:1. State Key Laboratory of Crystal Materials, Shandong University, Ji’nan 250100, China;2. Shanghai Institute of Laser Plasmas, CAEP, Shanghai 201800, China;3. Basic Department, Naval Aeronautical Engineering Institute, Yantai 264001, China
Abstract:Growth method is the dominating factor which greatly influences the growth and the laser damage threshold of the DKDP single crystal. In this paper, DKDP crystals were grown from 85%-deuterated solution by using traditional temperature-reduction method and point-seed rapid growth method respectively. Optical transmission and laser damage in unconditioned type Ⅱ tripler-cut DKDP crystals have been studied. It is found that, due to super-saturation effect, by using point-seed rapid growth method, the growth rate of DKDP is about 15 mm/day, which is ten times that by using traditional growth method. But more metallic ionic impurities and inclusions lead to the deterioration in the transmission spectra and laser induced damage threshold.
Keywords:DKDP crystal  laser damage threshold  crystal growth  ICF
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