硅基掺锰富硅氧化硅薄膜的电致发光

硅光子学中的关键问题是研制高效率的硅基光源，文章为此提出了一种实现硅基发光的方法。采用共溅射的方法在n＋型重掺杂硅衬底上制备了富硅氧化硅（SiO2∶Si）薄膜，然后用热扩散法进行了锰（Mn2＋）掺杂和光学活化。高分辨透射电镜观察表明薄膜中形成了3～5 nm的硅纳米晶体。该薄膜在紫外光照射下发射出明亮的绿光，光致发光谱峰位在524 nm（2.36 eV），一般认为这是来自Mn2＋能级4T1 →6A1基态跃迁的绿光辐射;其荧光寿命为0.8 ms。将该掺锰富硅二氧化硅（SiO2∶Si∶Mn2＋）做成电致发光结构，在低反偏电压下观察到近乎白色的电致发光（EL），光谱范围覆盖了400～800 nm。研究表明，该电致发光谱来源于薄膜中的Mn2＋以及氧化硅中的缺陷发光中心两者光谱的叠加;Mn2＋的发光是靠薄膜中的热电子来激发的;并由此探讨了薄膜中的硅纳米晶体在电致发光过程中的作用。

Electroluminescence from a Mn~(2+) Activated SiO_2:Si Film on n~+-Si Substrate

Recently,a monolithic integration of optics and electronics in a single Si chip has attracted a great deal of attention due to its attractive application prospects: the potential for forming high speeded information processing and transmission,and inexpensive and low power silicon chip.Developing high-efficiency silicon-based light sources is the main task in silicon photonics.In the present paper the authors explore a potential way for silicon-based light-emitting application.A Mn2+-activated silicon-rich ...