Hybrid heterostructure with a nanolayer of diluted GaIn(Mn)AsSb compound in a type II broken-gap heterojunction

Nanotechnology of obtainment of diluted magnetic semiconductors based on the GaInAsSb compounds is developed using the pulsed laser ablation deposition of Mn atoms on the surface of the epitaxial layer of a quaternary alloy obtained by liquid phase epitaxy. Fabricated heterostructures were studied using high-resolution X-ray diffraction for the Bragg and grazing diffraction geometries, and the depth profiling analysis was performed by secondary ion mass spectrometry. It was established that the nanoscale region of the Ga_0.96In_0.04As_0.11Sb_0.89 epilayer near the deposition surface of atomic Mn exhibits the presence of a quinary compound with Mn atoms in the lattice of the solid solution layer.