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Measurements of the optical absorption coefficient of Ar8+ ion implanted silicon layers using the photothermal radiometry and the modulated free carrier absorption methods
Institution:1. Department of Electronics and Computer Science, Koszalin University of Technology, 2 ?niadeckich St., 75-453 Koszalin, Poland;2. Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University, Grudzi?dzka 5/7, 87-100 Toruń, Poland;1. Leibniz-Institut für Oberflächenmodifizierung e. V., Permoserstraße 15, 04318 Leipzig, Germany;2. Solarion AG, Pereser Höhe 1, 04442 Zwenkau, Germany;1. Key Laboratory of Chemical Sensing & Analysis in Universities of Shandong, School of Chemistry and Chemical Engineering, University of Jinan, Jinan 250022, China;2. School of Life Science and Biotechnology, University of Jinan, Jinan 250022, China;1. Institute of Chemical and Environment Engineering, West Pomeranian University of Technology, Szczecin, Pu?askiego 10, 70-322 Szczecin, Poland;2. Polymer Institute, West Pomeranian University of Technology, Szczecin, Pu?askiego 10, 70-322 Szczecin, Poland;1. Nanjing University of Science & Technology, Xiaolingwei 200, 210094 Nanjing, China;2. Leibniz Institute for Surface Modification, Permoserstr. 15, 04318 Leipzig, Germany;3. Department of Optics and Quantum Electronics, University of Szeged, 6720 Szeged, Dóm tér 9, Hungary
Abstract:This paper presents a method of the measurement of the optical absorption coefficient of the Ar8+ ions implanted layers in the p-type silicon substrate. The absorption coefficient is calculated using a value of the attenuation of amplitudes of a photothermal radiometry (PTR) and/or a modulation free carrier absorption (MFCA) signals and the implanted layer thickness calculated by means of the TRIM program. The proposed method can be used to indicate the amorphization of the ions implanted layers.
Keywords:PTR method  MFCA method  Silicon  Optical properties of implanted layers  Plasma waves
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