Quantum mechanical Monte Carlo approach to electron transport at heterointerface

With the progress of LSI technology, the electronic device size is scaled down to the sub 0.1μ m region. In such an ultrasmall device, it is indispensable to take quantum mechanical effects into account in device modeling. In this paper, we present a newly developed quantum Monte Carlo device simulation applicable to ultrasmall semiconductor devices. In this model, the quantum effects are represented in terms of quantum mechanically corrected potential in the classical Boltzmann equation. It is demonstrated that the quantum transport effects such as tunneling and energy quantization in ultrasmall semiconductor devices are obtained for the first time by using the standard Monte Carlo techniques.