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Low Temperature Characteristics of Electronic Density of States in Epitaxial Graphene |
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| Authors: | N G Bobenko V E Egorushkin N V Melnikova A A Belosludtseva L D Barkalov A N Ponomarev |
| Institution: | 1.Institute of Strength Physics and Materials Science of SB RAS,Tomsk,Russia;2.National Research Tomsk Polytechnic University,Tomsk,Russia;3.Kuznetsov Siberian Physical Technical Institute of Tomsk State University,Tomsk,Russia;4.Tomsk State University of Control Systems and Radioelectronics,Tomsk,Russia |
| Abstract: | We propose a novel approach which considers the positions of defects in graphene structure to describe how electronic density of states and the type of graphene conductivity are affected by electron scattering by certain configurations of foreign atoms in graphene matrix. Despite the fact that there is still insufficient experimental data concerning the effect of short-range order on graphene physical properties, we assume that local disorder can play a decisive role in the low-temperature behavior of graphene’s electronic properties. |
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