|
|||||
|
|
C60 growth on Si(100), GaSe(0001) and GeS(001) |
|
| Authors: | G. Gensterblum L. -M. Yu J. -J. Pireaux P. A. Thiry R. Caudano J. -M. Themlin S. Bouzidi F. Coletti J. -M. Debever |
| Affiliation: | (1) Laboratoire Interdisciplinaire de Spectroscopie Electronique, Institute for Studies in Interface Sciences, Facultés Universitaires Notre-Dame de la Paix, 61, rue de Bruxelles, B-5000 Namur, Belgium;(2) Groupe de Physique des Etats Condensés, URA-CNRS 783, Université Aix Marseille II, Case 901, F-13288 Marseille Cédex 9, France |
| Abstract: | C60 films have been grown in ultra high vacuum on various crystalline substrates and the structure of the films has been investigated by low energy electron diffraction (LEED) and high resolution electron energy loss spectroscopy (HREELS). The C60 films form randomly oriented nanocrystals on Si(100), mesoscopic polycrystals on GaSe(0001) and microscopic single crystals on GeS(001). The vibrational structure of the C60/substrate interfaces is analyzed in detail by HREELS carried out in the dipole and impact scattering regimes. It is shown that the epitaxy of C60 on GeS(001) is induced by the weak van der Waals bonding and the peculiar corrugation of the substrate surface. |
| Keywords: | 68.55.– a 73.60.– n 79.20.Kz |
| 本文献已被 SpringerLink 等数据库收录！ | |