| Photoluminescence quenching of porous silicon by noble metal adsorbates |
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| 引用本文： | GUO Hengqun(Department of Applied Physics,Huaqiao Uniyersity,Quanzbou 3620] 1,China). Photoluminescence quenching of porous silicon by noble metal adsorbates[J]. Chinese Journal of Lasers, 1994, 3(6): 557-563 |
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| 作者姓名： | GUO Hengqun(Department of Applied Physics Huaqiao Uniyersity Quanzbou 3620] 1 China) |
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| 作者单位： | Department of Applied Physics，Huaqiao Uniyersity，Quanzbou 3620] 1，China |
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| 摘 要： | Ｐｈｏｔｏｌｕｍｉｎｅｓｃｅｎｃｅ ｑｕｅｎｃｈｉｎｇ ｏｆ ｐｏｒｏｕｓ ｓｉｌｉｃｏｎ ｂｙ ｎｏｂｌｅ ｍｅｔａｌ ａｄｓｏｒｂａｔｅｓ￥ＧＵＯＨｅｎｇｑｕｎ（ＤｅｐａｒｔｍｅｎｔｏｆＡｐｐｌｉｅｄＰｈｙｓｉｃｓ，ＨｕａｑｉａｏＵｎｉｙｅｒｓｉ...
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| 收稿时间： | 1994-08-15 |
Photoluminescence quenching of porous silicon by noble metal adsorbates |
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| GUO Hengqun. Photoluminescence quenching of porous silicon by noble metal adsorbates[J]. 中国激光(英文版), 1994, 3(6): 557-563 |
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| Authors: | GUO Hengqun |
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| Abstract: | The steady-state photoluminescence, transient photoluminescence andFourier--transform infrared absorption were studied for porous silicon quenched by noble metaladsorbates. The mechanism of the photoluminescence quenching of porous silicon in noblemetal ion solutions is discussed. |
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| Keywords: | porous silicon photoluminescence surface states noble metal |
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