Enhancement of the far-field output power and the properties of the very-small-aperture lasers |
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| Authors: | Q. Gan G. Song Y. Xu G. Yang Y. Li Q. Cao W. Ma J. Gao L. Chen |
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| Affiliation: | (1) Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083 Beijing, China;(2) Graduate School of the Chinese Academy of Sciences, 100039 Beijing, China;(3) E-O National Co., Ltd., 516023 Guangdong, China |
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| Abstract: | ![]()
We report on a VSAL structure fabricated by a 650 nm edge emitting laser diode with an Au-coated facet and an aperture size of 250 × 500 nm. The far field output power can maintain at 1 mW and the power density is 7.5 mW/μm2. Some properties of the VSAL including the threshold current change, the red-shift of the spectral position, and the strong relative-intensity-noise are presented. The physical mechanisms responsible for these phenomena are also discussed, which may contribute to the understanding and application of the potential device for near-field optics. |
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| Keywords: | 78.20.-e 78.20.Bh 78.20.Ci |
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