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Interface-related effects on confined excitons in GaAs/Al_xGa_1−xAs single quantum wells

Authors:	E C Ferreira J A P da Costa J A K Freire G A Farias and V N Freire

Institution:	^a Departamento de Física, Universidade Federal do Rio Grande do Norte, Campus Universitário, 59072-970 Natal, Rio Grande do Norte, Brazil ^b Departamento de Física, Universidade Federal do Ceará, Centro de Ciências Exatas, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceará, Brazil

Abstract:	Confined excitons in non-abrupt GaAs/Al_xGa_1?xAs single quantum wells are studied. The graded interfaces are described taking into account fluctuations in their thickness a and positioning with respect to the abrupt interface picture. Numerical results for confined (0,0),(1,1) and (0,2) excitons in GaAs/Al_0.3Ga_0.7As quantum wells show that while the interfacial fluctuations produce small changes (<0.5 meV) in the exciton binding energies, the confined exciton energies can be red- or blue-shifted as much as 25 meV for wells with mean width of 50 Å and 2 ML wide interfaces.

Keywords:	Quantum well Binding energy Exciton Interface effects
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