Optimization of electro-optical characteristics of GaAs-based oxide confinement VCSEL |
| |
| Authors: | M S Alias S Shaari and S M Mitani |
| |
| Institution: | 1.Microelectronic & Nanotechnology Program,Telekom Malaysia Research & Development (TMR&D),Cyberjaya,Malaysia;2.Institute of Microengineering and Nanoelectronics (IMEN),National University of Malaysia (UKM),Bangi,Malaysia |
| |
| Abstract: | An experimental study has been presented of the oxide-confined vertical-cavity surface-emitting lasers (VCSEL) operating in
the 850 nm region of the electromagnetic spectrum. In this regard, various relevant VCSEL samples with numerous oxide aperture
sizes have been fabricated and characterized. Thorough investigations of the electrical as well as optical characteristics
of the fabricated samples have been performed which includes the overall device performance as a function of the oxidize aperture
sizes. It is reported that the VCSEL with oxide aperture size <10 μm require low threshold currents (<1 mA). Further, the
differential quantum efficiencies up to 28% were measured for a number of these devices. It is found that devices employing
oxide aperture of 10 to 15 μm shows promising electro-optical characteristics for 850 nm oxide VCSEL optimization. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
