Growth of ZnO bulk crystals: A review |
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| Institution: | 1. School of Physics and Optoelectronic Engineering, Nanjing University of Information Science & Technology, Nanjing, 210044, China;2. Jiangsu Key Laboratory for Optoelectronic Detection of Atmosphere and Ocean, Nanjing University of Information Science & Technology, Nanjing, 210044, China;3. Physics Experiment Center, Nanjing University of Science and Technology, Nanjing, 210094, China;1. University of Sfax, Research Unit: PMISI, Sfax, Tunisia;2. University Lille North of France, ULCO, UDSMM, 62228 Calais, France;3. University Lille North of France, ULCO, UDSMM, 59140 Dunkerque, France;4. Hebei Union University, Electrical Engineering, 46 Xinhua Road, Tangshan 063009, Hebei, China;1. Centre for Nanoscience and Nanotechnology, School of Physics, Bharathidasan University, Tiruchirappalli 620024, Tamilnadu, India;2. National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan;3. Institute of Physics, Academia Sinica, Taipei 11529, Taiwan;4. Department of Physics, Tamkang University, Tamsui, Taipei County, Taiwan;5. Materials Science Division, Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067, India |
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| Abstract: | A critical review is proposed of the different techniques of bulk growth of ZnO crystals for their use as a substrate in the homoepitaxial growth of this attractive compound. The crystals are assessed from their structural and electrical properties and from the structural properties and purity of homoepitaxial films grown on them by various techniques such as plasma-assisted molecular beam epitaxy, pulsed laser deposition, magnetron sputtering, chemical vapor deposition, metalorganic chemical vapor epitaxy, liquid phase epitaxy. |
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| Keywords: | ZnO crystals Hydrothermal growth Bridgman growth CVT growth Homoepotaxial growth Characterization |
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