Coupled ultrathin InAs layers in GaAs as a tool for the determination of band offsets |
| |
| Authors: | J. Brü bach,A.Yu. Silov,J.E.M. Haverkort,W. van der Vleuten,J.H. Wolter |
| |
| Affiliation: | COBRA Interuniversity Research Institute, Eindhoven University of Technology, P.O. Box 513, Eindhoven, 5600 MB, The Netherlands;Department of Physics, Eindhoven University of Technology, P.O. Box 513, Eindhoven, 5600 MB, The Netherlands |
| |
| Abstract: | We have determined the band offsets at the highly strained InAs/GaAs heterointerface by photoluminescence excitation (PLE) measurements of the symmetric and antisymmetric states in two coupled ultrathin InAs layers embedded in a GaAs matrix. The conduction band offset ΔEccould be separated from the valence band offsets, since in a 32 monolayer (ML) barrier sample, the splitting between the heavy-hole exciton transitions is solely determined by ΔEc. Knowing ΔEc, the heavy-hole (hh) and light-hole (lh) band offsets ΔEhhand ΔElhcould subsequently be determined from the coupling-induced shift and splitting in samples with a 16, 8 and 4 ML barrier. We find a conduction band offset of 535 meV, a conduction band offset ratio ofQc= 0.58 and a strain induced splitting between the hh and lh subbands of 160 meV. |
| |
| Keywords: | strained quantum wells band offsets ultrathin InAs layers |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
