The diffusion of Pt in BST films on Pt/Ti/SiO2/Si substrate by sol-gel method |
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Authors: | Wencheng Hu Chuanren Yang Wanli Zhang Guijun Liu Dong Dong |
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Affiliation: | (1) School of Micro-electronics & Solid-state Electronics, University of Electronic Science and Technology of China, Chengdu, 610054, P.R.China |
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Abstract: | Barium strontium titanate (Ba0.65Sr0.35TiO3) ferroelectric thin films have been prepared by sol-gel method on Pt/Ti/SiO2/Si substrate. The X-ray diffraction (XRD) pattern indicated that the films were a polycrystalline perovskite structure and the atomic force microscope (AFM) image showed that the crystallite size and the root mean square roughness (RMS) were 90 nm and 3.6 nm, respectively. The X-ray photoelectron spectrum (XPS) images showed that Pt consisting in BST thin films was the metallic state, and the Auger electron spectroscopy (AES) analysed the Pt concentration in different depth profiles of BST thin films. The result displayed that the Pt diffusion in BST thin film is divided into two regions: near the BST/Pt interface, the diffusion type was volume diffusion, and far from the interface correspondingly, the diffusion type became grain boundary diffusion. In this paper, the previous researcher’s result was used to verify our conclusion. |
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Keywords: | Barium strontium titanate Thin film Auger electron spectroscopy X-ray photoelectron spectrum Pt diffusion |
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