Determination of migration of ion-implanted Ar and Zn in silica by backscattering spectrometry |
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Authors: | E Szilágyi I Bányász E Kótai A Németh C Major M Fried |
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Institution: | 1. Wigner Research Centre for Physics, Institute for Particle and Nuclear Physics, H-1121 Budapest, Konkoly Thege Miklós út 29-33, Hungaryszilagyi.edit@wigner.mta.hu;3. Wigner Research Centre for Physics, Institute for Particle and Nuclear Physics, H-1121 Budapest, Konkoly Thege Miklós út 29-33, Hungary;4. Centre for Energy Research, Institute for Technical Physics and Materials Science, H-1121 Budapest, Konkoly Thege Miklós út 29-33, Hungary |
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Abstract: | It is well known that the refractive indices of lots of materials can be modified by ion implantation, which is important for waveguide fabrication. In this work the effect of Ar and Zn ion implantation on silica layers was investigated by Rutherford Backscattering Spectrometry (RBS) and Spectroscopic Ellipsometry (SE). Silica layers produced by chemical vapour deposition technique on single crystal silicon wafers were implanted by Ar and Zn ions with a fluence of 1–2?×1016 Ar/cm2 and 2.5?×1016 Zn/cm2, respectively. The refractive indices of the implanted silica layers before and after annealing at 300°C and 600°C were determined by SE. The migration of the implanted element was studied by real-time RBS up to 500°C. It was found that the implanted Ar escapes from the sample at 300°C. Although the refractive indices of the Ar-implanted silica layers were increased compared to the as-grown samples, after the annealing this increase in the refractive indices vanished. In case of the Zn-implanted silica layer both the distribution of the Zn and the change in the refractive indices were found to be stable. Zn implantation seems to be an ideal choice for producing waveguides. |
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Keywords: | waveguides ion implantation silica chemical vapour deposition Rutherford backscattering spectrometry spectroscopic ellipsometry |
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