Influence of electron irradiation on properties of semi-insulating GaAs detectors |
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| Authors: | Andrea ?agátová Bohumír Za?ko Katarína Sedla?ková Márius Pavlovi? Vladimír Ne?as |
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| Institution: | 1. Institute of Nuclear and Physical Engineering, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovi?ova 3, 812 19 Bratislava, Slovakia;2. University Centre of Electron Accelerators, Slovak Medical University, Ku kyselke 497, 911 06 Tren?ín, Slovakiaandrea.sagatova@stuba.sk;4. Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravska cesta 9, 841 04 Bratislava, Slovakia |
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| Abstract: | The effects of electron beam irradiation on electrical and spectrometric properties of semi-insulating (SI) GaAs detectors were studied. The electric properties were monitored by reverse and forward current–voltage characteristics. In general, a breakdown voltage decrease with the dose was observed. However, some samples showed a local increase in the breakdown voltage at doses between 5 and 10?kGy. The detector spectrometric properties (the charge collection efficiency (CCE), the energy resolution and the detection efficiency) were evaluated from measured spectra of the 241Am radionuclide gamma source before and after electron irradiation. The CCE and energy resolution showed minor changes after irradiation. The detection efficiency noticed an initial increase (up to a dose of 5?kGy) followed by a permanent decrease. At 30?kGy, the overall degradation of detector functionality was observed with all samples. |
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| Keywords: | GaAs detector electron irradiation radiation hardness |
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