Thermal annealing behavior of luminescence of Gd3+-doped PbWO4 single crystal in air atmosphere |
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| Authors: | Y Huang X Feng W Zhu |
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| Institution: | (1) The State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050, P.R. China |
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| Abstract: | The results of photoluminescence measurements on as-grown PbWO4:Gd3+ show that Gd3+ acts as a sensitizer of luminescence in the PbWO4 lattice. Effects of sequential annealing in air atmosphere on luminescence of PbWO4:Gd3+ were investigated by means of X-ray excited luminescence and photoluminescence. The annealing experiments indicate that the essence of the annealing in air atmosphere is the exchange of oxygen components between PbWO4:Gd3+ crystal and the environment to improve the defects in the lattice. Annealing at a temperature of about 640 °C could further enhance the luminescence of PbWO4 and depress it at a higher temperature. However, PbWO4:Y3+ and PbWO4:La3+ crystals do not show any luminescence enhancement in the same annealing process. A tentative mechanism of luminescence enhancement due to annealing is suggested. PACS 74.62.Dh; 81.40.Tv; 78.55.-m; 82.80.Pv; 78.70.En |
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