Features of the formation of Mn doped InAs/GaAs quantum dots by vapor phase epitaxy |
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| Authors: | M. V. Dorokhin A. V. Zdoroveishev E. I. Malysheva Yu. A. Danilov B. N. Zvonkov A. E. Sholina |
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| Affiliation: | 1. Lobachevsky Physical-Technical Research Institute, Nizhni Novgorod State University, Nihzni Novgorod, 603950, Russia
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| Abstract: | A self-organized InAs/GaAs quantum dot (QD) array is doped with Mn. The effect of the Mn concentration on the morphology and QD luminescence properties is investigated. It is found that Mn deltadoping of the GaAs buffer layer before QD growth with a layer concentration of 1014 cm?2 leads to the formation of an array of large QDs with variable composition In x Ga1 ? x As. The effect is explained within a model of In and Ga atom interdiffusion. |
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