Optical constants of thin CoSi2 films on silicon |
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Authors: | M. Wölfel M. Schulz J. Ionally P. J. Grunthaner |
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Affiliation: | (1) Institut für Angewandte Physik, Universität, D-8520 Erlangen, Germany;(2) Jet Propulsion Laboratory, California Institute of Technology, 91109 Pasadena, CA, USA |
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Abstract: | The optical transmission of CoSi2 films of thickness 2.6–15 nm is measured in the wavelength range 1–20 m. The optical constants are evaluated by taking into account multiple reflections in the film and by fitting a Drude model. The plasma frequency p=5.4–7.6 eV is equivalent to a carrier density neff=3×1022 cm–3 and one carrier per unit cell. The relaxation frequency of the plasma resonance assumes high values =2 eV near the interface to silicon and decreases into the bulk film over several nanometers. Films grown off-axis from the (111) Si orientation exhibit an enhanced relaxation frequency. |
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Keywords: | 68.55 73.40 78.65 |
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