| 太阳电池扩散区结构和它的短路电流 |
| |
| 引用本文： | 张秀淼,吴新.太阳电池扩散区结构和它的短路电流[J].浙江大学学报(理学版),1992,19(3):292. |
| |
| 作者姓名： | 张秀淼 吴新 |
| |
| 作者单位： | 杭州大学电子工程系
(张秀淼)，浙江无线电厂(吴新) |
| |
| 摘 要： | 本文研究了硅扩散结太阳电池扩散区的结构和它的短路电流的关系.结果表明扩散区对短路电流的贡献依赖于扩散区厚度、表面复合速度和扩散区中的内建场梯度等因素.木文通过计算实例指出:被腐蚀减薄的扩散区结构的优劣需要具体评价，同时提供了这种具体评价的理论和方法。
|
| 关 键 词： | P-n结 太阳电池 半导体 |
The Structure of Diffused Region in Solar Cells and Its Short Circuit Current |
| |
| Zhang,Xiumiao.The Structure of Diffused Region in Solar Cells and Its Short Circuit Current[J].Journal of Zhejiang University(Sciences Edition),1992,19(3):292. |
| |
| Authors: | Zhang Xiumiao |
| |
| Institution: | Zhang Xiumiao (Department of Electronic Engineering)
Wu Xin (Radio Factory of Zhejiang) |
| |
| Abstract: | In this paper, the relationship between the structure of diffused region in solar cells and its short circuit current has been investigated. It has been shown that the short circuit current contributed from n+ diffused region is dependent on the thickness of the diffused region, surface recombination velocity and biult-in field gradient in the diffused region. The computations and analyses of some practical examples have indicated that in order to judge a specific structure of the diffused region thinned by the etching surface the concrete quantitative analysis is necessary. |
| |
| Keywords: | p - n conjunction solar cell semiconductor |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《浙江大学学报(理学版)》浏览原始摘要信息 |
| 点击此处可从《浙江大学学报(理学版)》下载免费的PDF全文 |
