不同成分比例CIGS薄膜及太阳电池的快速退火

研究了110~180 ℃(2 min)下的快速热退火对Cu(In,Ga)Se2(CIGS)薄膜特性及CIGS太阳电池性能的影响.结果表明:对于不同成分比例的CIGS(正常、富Cu、高Ga)电池来说,150 ℃,2 min的快速退火最利于电池性能及二极管特性的增加.其中,退火对富Cu电池的开路电压Voc改善最大,这是因为快速热退火对消除部分CIGS薄膜中的CuSex有积极作用,从薄膜的电阻率有少量提高,器件的短路电流Jsc有少量下降可以得到验证;而对于高Ga电池来说,填充因子FF的改善最大,这是因为高Ga样品的缺陷较多,退火会消除薄膜内部的部分缺陷,从而薄膜的迁移率及Jsc都有所提高,使得FF有较大的增加.

Rapid Thermal Annealing on Cu(In,Ga)Se2 Films and Solar Cells with Different Content Ratios

Rapid thermal annealing was performed on Cu(In,Ga)Se2 (CIGS) films and solar cells with three content ratios ( normal sample, Cu-rich sample, Ga-high sample) under various annealing temperature (110 ℃, 150 ℃, 180 ℃, 2 min holding time) in air ambient. Hall-effect and J-V measurements were carried out on CIGS films and cells before and after Rapid thermal annealing treatments to study effects of Rapid thermal annealing on the CIGS film properties and cell performance. The results show that the Rapid thermal annealing treatment (annealing temperature~150 ℃, holding time~2 min), as the optimal annealing condition, can provide improvements in cell performance and diode characteristics, which improves furthest the fill factor FF of Ga-high cell and the open circuit voltage Voc of Cu-rich cell via reducing the defect densities of Ga-high cell and passivation for Cu2-xSe compounds of Cu-rich cell.