Formation of As2O3 during anodic dissolution of GaAs |
| |
| Affiliation: | 1. Laboratory of Condensed Matter and Renewable Energy, Faculty of Sciences and Technology, University Hassan II of Casablanca, BP146, Casablanca, Morocco;2. Laboratoire de Matière Condensée et Sciences Interdisciplinaires (LaMCScI), Group of Optoelectronic of Semiconductors and Nanomaterials, ENSET, Mohammed V University in Rabat, Morocco;3. Faculty of Mathematics and Natural Sciences, Institute of Physics, J. Dlugosz University of Czestochowa, Al. Armii Krajowej 13/15, Czestochowa, Poland;1. Key Laboratory of Artificial Structure and Quantum Control, Ministry of Education, Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, People''s Republic of China;2. College of Physics and Electronic Information, Huaibei Normal University, Huaibei, 235000, People''s Republic of China;3. Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, People''s Republic of China;4. School of Chemistry and Chemical Technology, Shanghai Jiao Tong University, Shanghai, 200240, People''s Republic of China;1. School of Chemistry, The University of Sydney, NSW 2006, Australia;2. School of Photovoltaic and Renewable Energy Engineering, UNSW Sydney, NSW 2052, Australia;3. School of Chemistry, UNSW Sydney, NSW 2052, Australia;4. Lawrence Berkeley National Lab, 1 Cyclotron Road, Berkeley, CA 94720, United States;1. Walter Schottky Institut and Physics Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching, Germany;2. Department of Material Science, Metallurgical Engineering and Inorganic Chemistry, IMEYMAT, University of Cádiz, Campus Río San Pedro, 11510 Puerto Real, Spain;1. Key Laboratory of Green Chemical Engineering and Technology of College of Heilongjiang Province, College of Chemical and Environmental Engineering, Harbin University of Science and Technology, Harbin, 150040, PR China;2. College of Chemistry and Chemical Engineering, Qiqihar University, Qiqihar, 161006, PR China |
| |
| Abstract: | ![]()
The formation of As2O3 particles on GaAs surfaces, which have been anodically polarized at potentials <1 V versus SCE, has been studied using SEM, EDX, AES and XPS. Selective dissolution of GaAs occurs resulting in the formation of an As-rich surface layer. The As layer agglomerates and oxidizes on exposure to air forming As2O3 particles. The particle formation is dependent on test conditions, with p-GaAs forming As2O3 in both dark and daylight conditions; As2O3 only forms on n-GaAs when polarized in daylight. Polarization at corrosion potentials does not lead to particle formation, as GaAs dissolution rates are too low for surface enrichment of As. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
