涂层导体用金属基带表面对过渡层成核的机理研究

涂层导体用金属基带的表面状况对在其上制备的过渡层的形貌和取向有很大影响.在Ni单晶、轧制辅助双轴织构基带(RABiTS)Ni和经过硫化处理的Ni基带三种不同衬底上采用磁控溅射法制备了CeO₂过渡层.结果表明,在Ni单晶和硫化处理的Ni基带上制备的CeO₂薄膜取向较差,而在RABiTS Ni上制备的CeO₂薄膜完全呈c轴取向,表面平整致密.反射高能电子衍射图显示,RABiTS Ni具有的c(2×2)的S超结构对CeO₂薄膜的取向生长起到了很重要的作用. 关键词： 涂层导体 金属基带 超结构 过渡层

Effect of substrate topography for YBa2 Cu3 O7-x coated conductors on the nucleation mechanism of buffer layer

The surface condition of substrate tape is an important factor to obtain epitaxial buffer layer on biaxially textured Ni tape for YBa₂Cu₃O_7-x coated conductors. We prepare ceria films on Ni single crystal, biaxially textured Ni tape and sulfured Ni substrates by direct current magnetron sputtering. The results show that the ceria films prepared on Ni single crystal and sulfured Ni substrates each have a poor-textured grain structure. However, the ceria film fabricated on rolling assisted biaxially textured substrate (RABiTS) exhibits a good c-axis texture and desirable surface morphology. Reflection high-energy electron diffraction analysis indicates that the c(2×2) superstructure on the RABiTS Ni surface has a dramatic effect on the heteroepitaxial growth of oxide buffer layer.