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| CuI/Al双层电极的有机场效应晶体管 | |
| 引用本文： | 聂国政,彭俊彪,周仁龙. CuI/Al双层电极的有机场效应晶体管[J]. 物理学报, 2011, 60(12): 127304-127304. DOI: 10.7498/aps.60.127304 |
| 作者姓名： | 聂国政 彭俊彪 周仁龙 |
| 作者单位： | 1. 华南理工大学高分子光电材料与器件研究所,广州 510640;2. 华南理工大学特种功能材料及其制备新技术教育部重点实验室,广州 510640;3. 湖南科技大学物理学院,湘潭 411201 |
| 基金项目： | 国家自然科学基金(批准号:60937001,61036007)、国家重点基础研究发展计划(批准号:2009CB930604,2009CB623604)、国家高技术研究发展计划(批准号:2008AA03A335)和湖南省教育厅科研基金(批准号:90C404)资助的课题. |
| 摘 要： | 制备了CuI/Al为源极和漏电极的并五苯基场效应晶体管.相对于纯金属(Al, Au)电极的晶体管,所研制的晶体管的迁移率、阈值电压VT、开关电流比Ion/Ioff等参数都有明显改善.研究发现,在Al电极与并五苯半导体之间引入CuI作为空穴注入层,能够明显降低Al电极与并五苯之间的空穴注入势垒.紫外-可见光谱和X射线光电子能谱数据表明,这种空穴注入势垒的降低源自并五苯和Al向CuI的电子转移.关键词：有机场效应晶体管CuI/Al双层源漏电极电子转移 |
| 关 键 词： | 有机场效应晶体管 CuI/Al双层源漏电极 电子转移 |
| 收稿时间： | 2011-02-22 |
| 修稿时间： | 2011-08-02 |
Organic field-effect transistor with low-cost CuI/Al bilayer electrode |
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| Nie Guo-Zheng,Peng Jun-Biao and Zhou Ren-Long. Organic field-effect transistor with low-cost CuI/Al bilayer electrode[J]. Acta Physica Sinica, 2011, 60(12): 127304-127304. DOI: 10.7498/aps.60.127304 | |
| Authors: | Nie Guo-Zheng Peng Jun-Biao Zhou Ren-Long |
| Affiliation: | Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China; School of Physics, Hunan University of Science and Technology, Xiangtan 411201, China;Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China; Key Laboratory of Specially Functional Materials and Advanced Manufacturing Technology of Ministry of Education,South China Universit;School of Physics, Hunan University of Science and Technology, Xiangtan 411201, China |
| Abstract: | An organic field-effect transistor based on pentacene semiconductor with CuI/Al bilayer electrode is investigated. The CuI layer, directly contacting the organic semiconductor layer, serves as the hole-injection layer. The overcoated metal layer is responsible for the reduction in contact barrier. Compared with the device with a single metal (Al, Au) layer used as the source-drain electrode, the device with CuI/Al electrodes considerably improves the hole mobility and the on/off current ratio and greatly reduces the threshold voltage. Results of X-ray photoelectron and ultraviolet/visible absorption studies reveal that the reduction in the contact barrier can be attributed to an electron transfer from pentacene and Al to CuI. |
| Keywords: | organic field-effect transistor CuI/Al bilayer electrodes electron transfer |
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