|
|||||
|
|
Growth of good quality InGaN multiple quantum wells by MOCVD |
|
| Authors: | Annamraju Kasi Viswanath J. I. Lee S. T. Kim Dongho Kim |
| Affiliation: | a National Creative Research Initiatives, Center for Ultrafast Optical Characteristics Control, Korea Research Institute of Standards and Science, Yusong, Taejon 305-600, South Korea b Spectroscopy Laboratory, Korea Research Institute of Standards and Science, Yusong, Taejon 305-600, South Korea c Department of Physics, Chungbuk National University, Cheongju 361-763, South Korea d Department of Chemistry and National Creative Research Initiatives Center for Ultrafast Optics Control, Yonsei University, Seoul 120-749, South Korea |
| Abstract: | We report the optical properties of the blue emitting LED material that belongs to the III–V nitrides family. Quantum wells of InGaN were grown by metal organic chemical vapor deposition. Sapphire was used as the substrate material. Continuous wave and time resolved luminescence experiments were conducted in the temperature range of liquid helium to room temperature. Very intense blue luminescence was observed upto the room temperature. From the very broad linewidth of the emission it was concluded that the compositional fluctuations were dominant. At very low temperatures the lifetimes were found to be somewhat longer than the free exciton case which indicated the localization of excitons at potential fluctuations in the InGaN lattice. |
| Keywords: | A1. Nanostructures A3. Metalorganic chemical vapor deposition A3. Quantum wells B2. Semiconducting III–V materials B3. Light emitting diodes |
| 本文献已被 ScienceDirect 等数据库收录！ | |