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A1/Ti/4H-SiC Schottky barrier diodes with inhomogeneous barrier heights
Authors:Wang  Yue-Hu Zhang  Yi-Men Zhang  Yu-Ming Song  Qing-Wen Jia  Ren-Xu
Affiliation:School of Microelectronics and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
Abstract:Schottky contact, 4H-SiC, barrier height inhomogeneity, temperature
Keywords:Schottky contact   4H-SiC   barrier height inhomogeneity   temperature
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