| Giant Tunneling Magnetoresistance in Spin-Filter Magnetic Tunnel Junctions Based on van der Waals A-Type Antiferromagnet CrSBr |
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| 作者姓名： | 兰贵彬 许洪军 张雨 程琛 何斌 李嘉辉 何聪丽 万蔡华 丰家峰 魏红祥 张佳 韩秀峰 于国强 |
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| 作者单位： | 1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences;2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences;3. Songshan Lake Materials Laboratory;4. Institute of Advanced Materials, Beijing Normal University;5. School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology |
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| 基金项目： | supported by the National Key Research and Development Program of China (Grant No. 2021YFB3601300)；;the National Natural Science Foundation of China (Grants Nos. 52161160334, 52271237, 12274437, 12134017, and 12174426)；;the Science Center of the National Science Foundation of China (Grant No. 52088101)；;the Beijing Natural Science Foundation (Grant No. Z190009)；;the K.C.Wong Education Foundation (Grant No. GJTD2019-14)； |
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| 摘 要： | Two-dimensional van der Waals magnetic materials have demonstrated great potential for new-generation high-performance and versatile spintronic devices. Among them, magnetic tunnel junctions(MTJs) based on A-type antiferromagnets, such as CrI3, possess record-high tunneling magnetoresistance(TMR) because of the spin filter effect of each insulating unit ferromagnetic layer. However, the relatively low working temperature and the instability of the chromium halides hinder applications ...
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