| H2对Ar稀释SiH4等离子体CVD制备多晶硅薄膜的影响 |
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| 引用本文： | 祁 菁,金 晶,胡海龙,高平奇,袁保和,贺德衍.H2对Ar稀释SiH4等离子体CVD制备多晶硅薄膜的影响[J].物理学报,2006,55(11):5959-5963. |
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| 作者姓名： | 祁 菁 金 晶 胡海龙 高平奇 袁保和 贺德衍 |
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| 作者单位： | 兰州大学物理系，兰州 730000 |
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| 基金项目： | 国家自然科学基金(批准号：10175030)和高等学校优秀青年教师教学科研奖励计划资助的课题. |
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| 摘 要： | 以SiH4，Ar和H2为反应气体，采用射频等离子体化学气相沉积方法在300℃下制备了低温多晶Si薄膜.实验发现，反应气体中H2的比例是影响薄膜结晶质量的重要因素，在适量的H2比例下制备的多晶Si薄膜具有结晶相体积分数高，氢含量低，生长速率快、抗杂质污染等特性.
关键词：
低温多晶Si薄膜
等离子体CVD
4')" href="#">Ar稀释SiH4
2比例')" href="#">H2比例
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| 关 键 词： | 低温多晶Si薄膜 等离子体CVD Ar稀释SiH4 H2比例 |
| 文章编号： | 1000-3290/2006/55(11)/5959-05 |
| 收稿时间： | 11 1 2005 12:00AM |
| 修稿时间： | 2005-11-012006-02-21 |
Effect of H2 on polycrystalline Si films deposited by plasma-enhanced CVD using Ar-diluted SiH4 |
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| Qi Jing,Jin Jing,Hu Hai-Long,Gao Ping-Qi,Yuan Bao-He and He De-Yan.Effect of H2 on polycrystalline Si films deposited by plasma-enhanced CVD using Ar-diluted SiH4[J].Acta Physica Sinica,2006,55(11):5959-5963. |
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| Authors: | Qi Jing Jin Jing Hu Hai-Long Gao Ping-Qi Yuan Bao-He and He De-Yan |
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| Institution: | Department of Physics, Lanzhou University, Lanzhou 730000, China |
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| Abstract: | Low-temperature polycrystalline Si films were fabricated by radio frequency plasma-enhanced chemical vapor deposition using SiH4, Ar and H2 as source gas. It was found that the content of H2 in the mixture plays an important role for crystallization of Si films. High-quality low-temperature polycrystalline Si films were obtained under the optimal amount of H2 in the source gas. |
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| Keywords: | low-temperature polycrystalline Si film PECVD Ar-diluted SiH4 H2 flow |
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