Large‐scale synthesis of SiC nanowires from polysiloxane and wood powder composites

Large‐scale SiC nanowires were prepared by directly annealing polysiloxane and wood powder composites without catalyst assistant at 1420 °C under argon atmosphere. SiC nanowires are up to tens of micrometers in length and the diameters are in the range of 30–150 nm. Most nanowires are smooth and straight in morphology. High‐resolution TEM image shows that SiC nanowires grow along the [111] direction. The vapor–solid mechanism was proposed to explain the growth procedure of SiC nanowires. The present work provides an efficient and simple strategy for large‐scale production of SiC nanowires.