| Abstract: | We have investigated the complex behaviour of boron (B) redistribution process via silicon thin bi‐layers interface. It concerns the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi‐layers have been obtained by low pressure chemical vapor deposition (LPCVD) method at 480 °C, by using in‐situ nitrogen‐doped‐silicon (NiDoS) layer and strongly B doped polycrystalline‐silicon (P+) layer. To avoid long‐range B redistributions, thermal annealing was carried out at relatively low‐temperatures (600 °C and 700 °C) for various times ranging between 30 min and 2 h. To investigate the experimental secondary ion mass spectroscopy (SIMS) doping profiles, a redistribution model well adapted to the particular structure of two thin layers and to the effects of strong‐concentrations has been established. The good adjustment of the simulated profiles with the experimental SIMS profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles‐shoulders. The increasing kinetics of the B peak concentration near the bi‐layers interface is well reproduced by the established model. |
