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Thermoelectric properties of Ni-doped CuInTe2
Affiliation:1. School of Materials & Chemical Engineering, Ningbo University of Technology, Ningbo 315016, China;2. School of Chemistry, University of East Anglia, Norwich NR4 7TJ, United Kingdom
Abstract:
Polycrystalline samples of composition Cu1−xNixInTe2 (for x=0–0.05) were synthesized from elements of 5 N purity using a solid-state reaction. The phase purity of the products was verified by X-ray diffraction. Samples for measurement of the transport properties were prepared using hot-pressing. The samples were then characterized by the measurement of electrical conductivity, the Hall coefficient, the Seebeck coefficient, and the thermal conductivity over a temperature range of 300–675 K. All of the samples demonstrate p-type conductivity. We discuss the influence of Ni substitution on the free carrier concentration and the thermoelectric performance. The investigation of the thermoelectric properties shows an improvement up to 50% of ZT in the temperature range of 300–600 K.
Keywords:Semiconductors  Chalcogenides  X-ray diffraction  Transport properties
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